Effects of seed layer on the performance of microcrystalline silicon germanium solar cells
Using plasma enhanced
chemical vapor deposition (PECVD) at 13.56 MHz, a seed layer is
fabricated at the initial growth stage of the hydrogenated
microcrystalline silicon germanium (μc-Si1−xGex:H)
i-layer. The effects of seeding processes on the growth of μc-Si1−xGex:H
i-layers and the performance of μc-Si1−xGex:H p—i—n single junction solar cells
are investigated.
By applying this seeding method, the μc-Si1−xGex:H solar cell shows a significant improvement in short circuit current density (Jsc) and fill factor (FF) with an acceptable performance of blue response as a μc-Si:H solar cell even when the Ge content x increases up to 0.3. Finally, an improved efficiency of 7.05% is achieved for the μc-Si0.7Ge0.3:H solar cell.
By applying this seeding method, the μc-Si1−xGex:H solar cell shows a significant improvement in short circuit current density (Jsc) and fill factor (FF) with an acceptable performance of blue response as a μc-Si:H solar cell even when the Ge content x increases up to 0.3. Finally, an improved efficiency of 7.05% is achieved for the μc-Si0.7Ge0.3:H solar cell.
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