Characterization of Oxygen Precipitates in CZ-Silicon Crystals by Light-Scattering Tomography

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The density and light-scattering intensity of oxygen precipitates in CZ silicon crystals are measured by IR light-scattering tomography. The numerical data clarified through the measurements are discussed in relation to the amount of precipitated oxygen. The results obtained here correspond well with the theoretical analysis that oxygen precipitates cause light to scatter. The information obtained by IR light-scattering tomography explains very well the precipitation process of oxygen in CZ silicon crystals, and the densities of precipitates obtained by this method are reliable.

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