Characterization of Oxygen Precipitates in CZ-Silicon Crystals by Light-Scattering Tomography
The density and light-scattering intensity of oxygen precipitates in CZ silicon
crystals are measured by IR light-scattering tomography. The numerical
data clarified through the measurements are discussed in relation to the
amount of precipitated oxygen. The results obtained here correspond
well with the theoretical analysis that oxygen precipitates cause light
to scatter. The information obtained by IR light-scattering tomography
explains very well the precipitation process of oxygen in CZ silicon
crystals, and the densities of precipitates obtained by this method are
reliable.
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Other products like Silicon Nitride Crystal Structure, Silicon Carbide Wafers, at semiconductorwafers.net.
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